We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of ......

文章研究了Si基分子束外延HgCdTe原生材料、P型退火材料和N型退火材料的霍耳参数、少子寿命等材料电学特性。研究发现，晶格失配导致......